2SB1165 Bipolar Transistor

Characteristics of 2SB1165 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1165

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1165 transistor can have a current gain of 70 to 400. The gain of the 2SB1165-Q will be in the range from 70 to 140, for the 2SB1165-R it will be in the range from 100 to 200, for the 2SB1165-S it will be in the range from 140 to 280, for the 2SB1165-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1165 might only be marked "B1165".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1165 is the 2SD1722.

Replacement and Equivalent for 2SB1165 transistor

You can replace the 2SB1165 with the 2SB1166.
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