2SB1009-P Bipolar Transistor

Characteristics of 2SB1009-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 82 to 180
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1009-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1009-P transistor can have a current gain of 82 to 180. The gain of the 2SB1009 will be in the range from 82 to 390, for the 2SB1009-Q it will be in the range from 120 to 270, for the 2SB1009-R it will be in the range from 180 to 390.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1009-P might only be marked "B1009-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1009-P is the 2SD1380-P.

Replacement and Equivalent for 2SB1009-P transistor

You can replace the 2SB1009-P with the 2SA1214, 2SA1217, 2SA1359, 2SA715, 2SB1165, 2SB1166, 2SB744, 2SB744A, BD132, BD176, BD178, BD188, BD190, BD234, BD234G, BD236, BD236G, BD376, BD378, BD786, BD788, BD788G, KSB744, KSB744A, KSE170, KSE171, KTA1715, MJE170, MJE170G, MJE171, MJE171G, MJE230, MJE232, MJE233, MJE235, MJE371 or MJE371G.
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