MJE170G Bipolar Transistor
Characteristics of MJE170G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -40 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 12.5 W
- DC Current Gain (hfe): 50 to 250
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of MJE170G
Replacement and Equivalent for MJE170G transistor
If you find an error please send an email to mail@el-component.com