MJE170G Bipolar Transistor

Characteristics of MJE170G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE170G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE170G transistor

You can replace the MJE170G with the BD132, BD176, BD178, BD180, BD180G, BD188, BD190, BD786, BD788, BD788G, BD790, KSE170, KSE171, KSE172, MJE170, MJE171, MJE171G, MJE172, MJE172G, MJE232, MJE235 or MJE252.
If you find an error please send an email to mail@el-component.com