2SA1359 Bipolar Transistor

Characteristics of 2SA1359 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126F

Pinout of 2SA1359

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1359 transistor can have a current gain of 80 to 240. The gain of the 2SA1359-O will be in the range from 80 to 160, for the 2SA1359-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1359 might only be marked "A1359".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1359 is the 2SC3422.

SMD Version of 2SA1359 transistor

The 2DA1213 (SOT-89) and 2SA1213 (SOT-89) is the SMD version of the 2SA1359 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1359 transistor

You can replace the 2SA1359 with the 2SA1217, 2SB1165, 2SB1166, 2SB744, 2SB744A, BD132, BD176, BD178, BD180, BD180G, BD188, BD190, BD786, BD788, BD788G, BD790, KSB744, KSB744A, KSE170, KSE171, KSE172, MJE170, MJE170G, MJE171, MJE171G, MJE172, MJE172G, MJE232, MJE235 or MJE252.
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