2SD1380-P Bipolar Transistor

Characteristics of 2SD1380-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 82 to 180
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1380-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1380-P transistor can have a current gain of 82 to 180. The gain of the 2SD1380 will be in the range from 82 to 390, for the 2SD1380-Q it will be in the range from 120 to 270, for the 2SD1380-R it will be in the range from 180 to 390.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1380-P might only be marked "D1380-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1380-P is the 2SB1009-P.

Replacement and Equivalent for 2SD1380-P transistor

You can replace the 2SD1380-P with the 2SC1162, 2SC3422, 2SD1722, 2SD1723, 2SD794, 2SD794A, BD131, BD175, BD177, BD187, BD189, BD233, BD233G, BD235, BD235G, BD375, BD377, BD785, BD787, BD787G, BDX35, BDX36, KSD794, KSD794A, KSE180, KSE181, KTC2814, MJE180, MJE180G, MJE181, MJE181G, MJE220, MJE222, MJE223, MJE225, MJE521 or MJE521G.
If you find an error please send an email to mail@el-component.com