2SB1009-R Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -32 V
• Collector-Base Voltage, max: -40 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -2 A
• Collector Dissipation: 10 W
• DC Current Gain (h_fe): 180 to 390
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB1009-R transistor can have a current gain of 180 to 390. The gain of the 2SB1009 will be in the range from 82 to 390, for the 2SB1009-P it will be in the range from 82 to 180, for the 2SB1009-Q it will be in the range from 120 to 270.Sometimes the "2S" prefix is not marked on the package - the 2SB1009-R might only be marked "B1009-R".The complementary NPN transistor to the 2SB1009-R is the 2SD1380-R.You can replace the 2SB1009-R with the 2SB1142, 2SB1143, 2SB1165, 2SB1166, 2SB986, BD132, BD188, BD190, BD234, BD234G, BD236, BD236G, MJE232, MJE235, MJE371 or MJE371G.