MJE170 Bipolar Transistor

Characteristics of MJE170 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE170

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE170 is the MJE180.

Replacement and Equivalent for MJE170 transistor

You can replace the MJE170 with the BD132, BD176, BD178, BD180, BD180G, BD188, BD190, BD786, BD788, BD788G, BD790, KSE170, KSE171, KSE172, MJE170G, MJE171, MJE171G, MJE172, MJE172G, MJE232, MJE235 or MJE252.
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