2SA900-T Bipolar Transistor

Characteristics of 2SA900-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -18 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1.2 W
  • DC Current Gain (hfe): 250 to 360
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA900-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA900-T transistor can have a current gain of 250 to 360. The gain of the 2SA900 will be in the range from 90 to 470, for the 2SA900-Q it will be in the range from 90 to 155, for the 2SA900-R it will be in the range from 130 to 210, for the 2SA900-S it will be in the range from 180 to 280, for the 2SA900-U it will be in the range from 330 to 470.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA900-T might only be marked "A900-T".

SMD Version of 2SA900-T transistor

The 2SA1365 (SOT-23), 2SA1365-F (SOT-23), BCX69 (SOT-89) and BCX69-25 (SOT-89) is the SMD version of the 2SA900-T transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA900-T transistor

You can replace the 2SA900-T with the 2SA2196, 2SA2197, 2SB1009, 2SB1009-R, 2SB1127, 2SB1127-T, 2SB1140, 2SB1140-T, 2SB1141, 2SB1141-T, 2SB772, 2SB772E, 2SB772GR, BD186, KSB772, KSB772-G, KSH772, KSH772-G, KTB772, KTB772-GR or MJE370.
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