2SB1141-T Bipolar Transistor

Characteristics of 2SB1141-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -18 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SB1141-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1141-T transistor can have a current gain of 200 to 400. The gain of the 2SB1141 will be in the range from 70 to 400, for the 2SB1141-Q it will be in the range from 70 to 140, for the 2SB1141-R it will be in the range from 100 to 200, for the 2SB1141-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1141-T might only be marked "B1141-T".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1141-T is the 2SD1681-T.

SMD Version of 2SB1141-T transistor

The 2SA1365 (SOT-23), BCX69 (SOT-89) and BCX69-25 (SOT-89) is the SMD version of the 2SB1141-T transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1141-T transistor

You can replace the 2SB1141-T with the 2SA2196, 2SA2197, 2SB1127, 2SB1127-T, 2SB1140, 2SB1140-T, 2SB772, 2SB772E, 2SB772GR, BD186, KSB772, KSB772-G, KSH772, KSH772-G, KTB772, KTB772-GR or MJE370.
If you find an error please send an email to mail@el-component.com