KSB772 Bipolar Transistor

Characteristics of KSB772 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 60 to 400
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB772 transistor

Pinout of KSB772

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB772 transistor can have a current gain of 60 to 400. The gain of the KSB772-G will be in the range from 200 to 400, for the KSB772-O it will be in the range from 100 to 200, for the KSB772-R it will be in the range from 60 to 120, for the KSB772-Y it will be in the range from 160 to 320.

Complementary NPN transistor

The complementary NPN transistor to the KSB772 is the KSD882.

Replacement and Equivalent for KSB772 transistor

You can replace the KSB772 with the 2SB772, BD132, BD186, BD188, BD190, KSH772, MJE232, MJE235 or MJE370.
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