KSB772-G Bipolar Transistor

Characteristics of KSB772-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB772GR transistor

Pinout of KSB772-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB772-G transistor can have a current gain of 200 to 400. The gain of the KSB772 will be in the range from 60 to 400, for the KSB772-O it will be in the range from 100 to 200, for the KSB772-R it will be in the range from 60 to 120, for the KSB772-Y it will be in the range from 160 to 320.

Complementary NPN transistor

The complementary NPN transistor to the KSB772-G is the KSD882-G.

Replacement and Equivalent for KSB772-G transistor

You can replace the KSB772-G with the 2SA2196, 2SA2197, 2SB1143, 2SB1143-T, 2SB1165, 2SB1165-T, 2SB1166, 2SB1166-T, 2SB772, 2SB772E, 2SB772GR, 2SB986, 2SB986-T, BD132, BD186, BD188, BD190, KSH772, KSH772-G, KTB772, KTB772-GR, MJE232, MJE235 or MJE370.
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