KTB772 Bipolar Transistor

Characteristics of KTB772 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 400
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB772 transistor

Pinout of KTB772

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB772 transistor can have a current gain of 100 to 400. The gain of the KTB772-GR will be in the range from 200 to 400, for the KTB772-O it will be in the range from 100 to 200, for the KTB772-Y it will be in the range from 160 to 320.

Complementary NPN transistor

The complementary NPN transistor to the KTB772 is the KTD882.

Replacement and Equivalent for KTB772 transistor

You can replace the KTB772 with the 2SB1143, 2SB1165, 2SB1166, 2SB772, 2SB986, BD132, BD186, BD188, BD190, KSB772, KSH772, MJE232, MJE235 or MJE370.
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