KTB772-GR Bipolar Transistor
Characteristics of KTB772-GR Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -30 V
- Collector-Base Voltage, max: -40 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 80 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SB772GR transistor
Pinout of KTB772-GR
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KTB772-GR transistor
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