2SB1141 Bipolar Transistor
Characteristics of 2SB1141 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -18 V
- Collector-Base Voltage, max: -20 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.2 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 70 to 400
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +125 °C
- Package: TO-126
Pinout of 2SB1141
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1141 transistor
If you find an error please send an email to mail@el-component.com