2SB772E Bipolar Transistor

Characteristics of 2SB772E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB772E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB772E transistor can have a current gain of 200 to 400. The gain of the 2SB772 will be in the range from 60 to 400, for the 2SB772GR it will be in the range from 200 to 400, for the 2SB772O it will be in the range from 100 to 200, for the 2SB772P it will be in the range from 160 to 320, for the 2SB772Q it will be in the range from 100 to 200, for the 2SB772R it will be in the range from 60 to 120, for the 2SB772Y it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB772E might only be marked "B772E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB772E is the 2SD882E.

Replacement and Equivalent for 2SB772E transistor

You can replace the 2SB772E with the 2SA2196, 2SA2197, 2SB1143, 2SB1143-T, 2SB1165, 2SB1165-T, 2SB1166, 2SB1166-T, 2SB986, 2SB986-T, BD132, BD186, BD188, BD190, KSB772, KSB772-G, KSH772, KSH772-G, KTB772, KTB772-GR, MJE232, MJE235 or MJE370.
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