2SA1535A-Q Bipolar Transistor

Characteristics of 2SA1535A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 90 to 155
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SA1535A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1535A-Q transistor can have a current gain of 90 to 155. The gain of the 2SA1535A will be in the range from 90 to 220, for the 2SA1535A-R it will be in the range from 130 to 220.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1535A-Q might only be marked "A1535A-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1535A-Q is the 2SC3944A-Q.

SMD Version of 2SA1535A-Q transistor

The KST93 (SOT-23) is the SMD version of the 2SA1535A-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1535A-Q transistor

You can replace the 2SA1535A-Q with the 2SA1006, 2SA1006A, 2SA1006B, 2SA1009, 2SA1306A, 2SA1306B, 2SA1668, 2SA1859A, 2SA913A, 2SA913A-Q, 2SA968A, 2SA968B, 2SB630, 2SB940A, FJP1943, FJP1943O, FJPF1943, FJPF1943O, KTA1659A, KTA968A, KTB1369, MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851 or MJE5851G.
If you find an error please send an email to mail@el-component.com