IRF710 MOSFET
Specifications of IRF710 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 400 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3.6 mΩ
- Continuous Drain Current: 2 A
- Total Gate Charge: 17 nC
- Power Dissipation: 36 W
- Package: TO-220AB
Pinout of IRF710
Replacement and Equivalent of IRF710 Transistor
You can replace the IRF710 with the
IRF720,
IRF730,
IRF730A,
IRF730B,
IRF740,
IRF740A,
IRF740B,
IRF740LC,
IRF820,
IRF820A,
IRF830,
IRF830A,
IRF830B,
IRF840,
IRF840A,
IRF840LC,
IRFB13N50A,
IRFB17N50L,
IRFB9N60A,
IRFB9N65A,
IRFBC30,
IRFBC30A,
IRFBC40,
IRFBC40A,
IRFBC40LC,
IRFBE30
