IRF820 MOSFET
Specifications of IRF820 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3 mΩ
- Continuous Drain Current: 2.5 A
- Total Gate Charge: 24 nC
- Power Dissipation: 50 W
- Package: TO-220AB
Pinout of IRF820
Replacement and Equivalent of IRF820 Transistor
You can replace the IRF820 with the
IRF820A,
IRF830,
IRF830A,
IRF830B,
IRF840,
IRF840A,
IRF840LC,
IRFB13N50A,
IRFB17N50L,
IRFB9N60A,
IRFB9N65A,
IRFBC30,
IRFBC30A,
IRFBC40,
IRFBC40A,
IRFBC40LC,
IRFBE30
