IRF820A MOSFET
Specifications of IRF820A MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 3 mΩ
- Continuous Drain Current: 2.5 A
- Total Gate Charge: 17 nC
- Power Dissipation: 50 W
- Package: TO-220AB