IRFBE30 MOSFET
Specifications of IRFBE30 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 800 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3 mΩ
- Continuous Drain Current: 4.1 A
- Total Gate Charge: 78 nC
- Power Dissipation: 125 W
- Package: TO-220AB
Pinout of IRFBE30
