IRFB13N50A MOSFET
Specifications of IRFB13N50A MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 0.45 mΩ
- Continuous Drain Current: 14 A
- Total Gate Charge: 81 nC
- Power Dissipation: 250 W
- Package: TO-220AB
Pinout of IRFB13N50A
