IRF730 MOSFET

Specifications of IRF730 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 400 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1 mΩ
  • Continuous Drain Current: 5.5 A
  • Total Gate Charge: 38 nC
  • Power Dissipation: 74 W
  • Package: TO-220AB

Pinout of IRF730

IRF730 pinout

Replacement and Equivalent of IRF730 Transistor

You can replace the IRF730 with the IRF730A, IRF730B, IRF740, IRF740A, IRF740B, IRF740LC, IRF840, IRF840A, IRF840LC, IRFB13N50A, IRFB17N50L, IRFB9N60A, IRFB9N65A