IRF830 MOSFET

Specifications of IRF830 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 500 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.5 mΩ
  • Continuous Drain Current: 4.5 A
  • Total Gate Charge: 38 nC
  • Power Dissipation: 74 W
  • Package: TO-220AB

Pinout of IRF830

IRF830 pinout

Replacement and Equivalent of IRF830 Transistor

You can replace the IRF830 with the IRF830A, IRF830B, IRF840, IRF840A, IRF840LC, IRFB13N50A, IRFB17N50L, IRFB9N60A, IRFB9N65A, IRFBC40, IRFBC40A, IRFBC40LC