IRF730B MOSFET
Specifications of IRF730B MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 400 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 1 mΩ
- Continuous Drain Current: 6 A
- Total Gate Charge: 9 nC
- Power Dissipation: 104 W
- Package: TO-220AB