MJ8500 Bipolar Transistor

Characteristics of MJ8500 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 700 V
  • Collector-Base Voltage, max: 1200 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 2.5 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 8
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ8500

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ8500 transistor

You can replace the MJ8500 with the BUX48C, MJ12002, MJ12004, MJ12005, MJ8501, MJ8502, MJ8503, MJ8504 or MJ8505.
If you find an error please send an email to mail@el-component.com