MJ12002 Bipolar Transistor

Characteristics of MJ12002 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 750 V
  • Collector-Base Voltage, max: 1500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2.5 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 11
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of MJ12002

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ12002 transistor

You can replace the MJ12002 with the MJ12004 or MJ12005.
If you find an error please send an email to mail@el-component.com