MJ12002 Bipolar Transistor
Characteristics of MJ12002 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 750 V
- Collector-Base Voltage, max: 1500 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2.5 A
- Collector Dissipation: 75 W
- DC Current Gain (hfe): 11
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3
Pinout of MJ12002
Replacement and Equivalent for MJ12002 transistor
If you find an error please send an email to mail@el-component.com