MJ8504 Bipolar Transistor

Characteristics of MJ8504 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 700 V
  • Collector-Base Voltage, max: 1200 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 8
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ8504

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ8504 transistor

You can replace the MJ8504 with the BUX48C or MJ8505.
If you find an error please send an email to mail@el-component.com