MJ8502 Bipolar Transistor

Characteristics of MJ8502 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 700 V
  • Collector-Base Voltage, max: 1200 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 8
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ8502

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ8502 transistor

You can replace the MJ8502 with the BUX48C, MJ12004, MJ12005, MJ8503, MJ8504 or MJ8505.
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