MJ8505 Bipolar Transistor

Characteristics of MJ8505 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 800 V
  • Collector-Base Voltage, max: 1400 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 8
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ8505

Here is an image showing the pin diagram of this transistor.
If you find an error please send an email to mail@el-component.com