MJ12005 Bipolar Transistor

Characteristics of MJ12005 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 750 V
  • Collector-Base Voltage, max: 1500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 12
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of MJ12005

Here is an image showing the pin diagram of this transistor.
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