MJ8503 Bipolar Transistor
Characteristics of MJ8503 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 800 V
- Collector-Base Voltage, max: 1400 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 8
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ8503
Replacement and Equivalent for MJ8503 transistor
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