MJ12004 Bipolar Transistor

Characteristics of MJ12004 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 750 V
  • Collector-Base Voltage, max: 1500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 12
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of MJ12004

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ12004 transistor

You can replace the MJ12004 with the MJ12005.
If you find an error please send an email to mail@el-component.com