MJ12020 Bipolar Transistor
Characteristics of MJ12020 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 450 V
- Collector-Base Voltage, max: 850 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 5
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ12020
Replacement and Equivalent for MJ12020 transistor
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