MJ12020 Bipolar Transistor

Characteristics of MJ12020 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 450 V
  • Collector-Base Voltage, max: 850 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 5
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ12020

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJ12020 transistor

You can replace the MJ12020 with the 2SC2429A, 2SC2965, 2SC3044A, 2SC3046, 2SC3058A, 2SD820, 2SD821, 2SD822, 2SD870, 2SD871, BUX47A, BUX48A, BUX48B, BUX48C, BUX81, BUX83, MJ12004, MJ12005, MJ12021, MJ12022, MJ13071, MJ16002, MJ16004, MJ16006, MJ16008, MJ8502, MJ8503, MJ8504 or MJ8505.
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