2SD820 Bipolar Transistor

Characteristics of 2SD820 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 600 V
  • Collector-Base Voltage, max: 1500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 8
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SD820

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD820 might only be marked "D820".

Replacement and Equivalent for 2SD820 transistor

You can replace the 2SD820 with the 2SD821, 2SD822, 2SD870, 2SD871, BUX48B, BUX48C, MJ12004, MJ12005, MJ8502, MJ8503, MJ8504 or MJ8505.
If you find an error please send an email to mail@el-component.com