2SD820 Bipolar Transistor
Characteristics of 2SD820 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 600 V
- Collector-Base Voltage, max: 1500 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 8
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3
Pinout of 2SD820
Marking
Replacement and Equivalent for 2SD820 transistor
If you find an error please send an email to mail@el-component.com