KTD882-GR Bipolar Transistor

Characteristics of KTD882-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882GR transistor

Pinout of KTD882-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD882-GR transistor can have a current gain of 200 to 400. The gain of the KTD882 will be in the range from 100 to 400, for the KTD882-O it will be in the range from 100 to 200, for the KTD882-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KTD882-GR is the KTB772-GR.

Replacement and Equivalent for KTD882-GR transistor

You can replace the KTD882-GR with the 2SC2270, 2SC3420, 2SC3420-GL, 2SC6101, 2SC6102, 2SD1348, 2SD1348-T, 2SD1683, 2SD1683-T, 2SD1722, 2SD1722-R, 2SD1723, 2SD1723-R, 2SD882, 2SD882E, 2SD882GR, BD131, BD185, BD187, BD189, BDX35, BDX36, KSD882, KSD882-G, KSH882, KSH882-G, MJE222, MJE225 or MJE520.
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