KTD2061 Bipolar Transistor

Characteristics of KTD2061 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of KTD2061

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD2061 transistor can have a current gain of 70 to 240. The gain of the KTD2061O will be in the range from 70 to 140, for the KTD2061Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KTD2061 is the KTB1369.

Replacement and Equivalent for KTD2061 transistor

You can replace the KTD2061 with the 2SC4382, 2SC4883A, 2SD1264A, 2SD772A, 2SD772B, 2SD792A, 2SD792B, MJE15032 or MJE15032G.
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