HSB1109-B Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -0.1 A
• Collector Dissipation: 1.25 W
• DC Current Gain (h_fe): 60 to 120
• Transition Frequency, min: 140 MHz
• Operating and Storage Junction Temperature Range: -50 to +150 °C
• Package: TO-126
• Electrically Similar to the Popular 2SB1109-B transistor

Here is an image showing the pin diagram of this transistor.The HSB1109-B transistor can have a current gain of 60 to 120. The gain of the HSB1109 will be in the range from 60 to 320, for the HSB1109-C it will be in the range from 100 to 200, for the HSB1109-D it will be in the range from 160 to 320.The complementary NPN transistor to the HSB1109-B is the HSD1609-B.You can replace the HSB1109-B with the 2SA1220A, 2SA1220A-R, 2SA1352, 2SA1352-D, 2SA1353, 2SA1353-D, 2SA1380, 2SA1380-D, 2SA1381, 2SA1381-D, 2SA1406, 2SA1406-D, 2SA1407, 2SA1407-D, 2SA1478, 2SA1478-D, 2SA1479, 2SA1479-D, 2SA1480, 2SA1480-D, 2SA1540, 2SA1540-D, 2SA1541, 2SA1541-D, 2SB1109, 2SB1109-B, 2SB1110, 2SB1110-B, 2SB649A, 2SB649A-B, KSA1220A, KSA1220A-R, KSA1381, KSA1381-D, KSE350, MJE350 or MJE350G.