2SB649A-B Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -180 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -1.5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 60 to 120
• Transition Frequency, min: 140 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB649A-B transistor can have a current gain of 60 to 120. The gain of the 2SB649A will be in the range from 60 to 200, for the 2SB649A-C it will be in the range from 100 to 200.Sometimes the "2S" prefix is not marked on the package - the 2SB649A-B might only be marked "B649A-B".The complementary NPN transistor to the 2SB649A-B is the 2SD669A-B.