MJE350G Bipolar Transistor

Characteristics of MJE350G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The MJE350G is the lead-free version of the MJE350 transistor

Pinout of MJE350G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE350G transistor

You can replace the MJE350G with the KSE350 or MJE350.
If you find an error please send an email to mail@el-component.com