2SB1109 Bipolar Transistor

Characteristics of 2SB1109 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126

Pinout of 2SB1109

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1109 transistor can have a current gain of 60 to 320. The gain of the 2SB1109-B will be in the range from 60 to 120, for the 2SB1109-C it will be in the range from 100 to 200, for the 2SB1109-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1109 might only be marked "B1109".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1109 is the 2SD1609.

2SB1109 Transistor in TO-92 Package

The HSB1109S is the TO-92 version of the 2SB1109.

Replacement and Equivalent for 2SB1109 transistor

You can replace the 2SB1109 with the 2SA1220A, 2SA1352, 2SA1353, 2SA1380, 2SA1381, 2SA1406, 2SA1407, 2SA1478, 2SA1479, 2SA1480, 2SA1540, 2SA1541, 2SB1110, HSB1109, KSA1220A or KSA1381.
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