HSD1609-B Bipolar Transistor

Characteristics of HSD1609-B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 145 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1609-B transistor

Pinout of HSD1609-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The HSD1609-B transistor can have a current gain of 60 to 120. The gain of the HSD1609 will be in the range from 60 to 320, for the HSD1609-C it will be in the range from 100 to 200, for the HSD1609-D it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the HSD1609-B is the HSB1109-B.

Replacement and Equivalent for HSD1609-B transistor

You can replace the HSD1609-B with the 2N5655, 2N5655G, 2N5656, 2N5656G, 2SC2258, 2SC2688, 2SC2688-M, 2SC2690A, 2SC2690A-R, 2SC3416, 2SC3416-D, 2SC3417, 2SC3417-D, 2SC3502, 2SC3502-D, 2SC3503, 2SC3503-D, 2SC3600, 2SC3600-D, 2SC3601, 2SC3601-D, 2SC3788, 2SC3788-D, 2SC3789, 2SC3789-D, 2SC3790, 2SC3790-D, 2SC3955, 2SC3955-D, 2SC3956, 2SC3956-D, 2SC4212, 2SD1609, 2SD1609-B, 2SD1610, 2SD1610-B, 2SD669A, 2SD669A-B, BD127, BD128, BD157, BD158, KSC2258, KSC2258A, KSC2688, KSC2688-O, KSC2690A, KSC2690A-R, KSC3502, KSC3502-D, KSC3503, KSC3503-D, KSE340, MJE340, MJE340G, MJE344, MJE3440 or MJE344G.
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