HSB1109-D Bipolar Transistor

Characteristics of HSB1109-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1109-D transistor

Pinout of HSB1109-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The HSB1109-D transistor can have a current gain of 160 to 320. The gain of the HSB1109 will be in the range from 60 to 320, for the HSB1109-B it will be in the range from 60 to 120, for the HSB1109-C it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the HSB1109-D is the HSD1609-D.

Replacement and Equivalent for HSB1109-D transistor

You can replace the HSB1109-D with the 2SA1142, 2SA1142P, 2SA1209, 2SA1210, 2SA1220A, 2SA1220A-P, 2SA1248, 2SA1249, 2SA1352, 2SA1352-F, 2SA1353, 2SA1353-F, 2SA1380, 2SA1380-F, 2SA1381, 2SA1381-F, 2SA1406, 2SA1406-F, 2SA1407, 2SA1407-F, 2SA1477, 2SA1478, 2SA1478-F, 2SA1479, 2SA1479-F, 2SA1480, 2SA1480-F, 2SA1507, 2SA1540, 2SA1540-F, 2SA1541, 2SA1541-F, 2SA795A, 2SB1109, 2SB1109-D, 2SB1110, 2SB1110-D, KSA1142, KSA1142Y, KSA1220A, KSA1220A-Y, KSA1381 or KSA1381-F.
If you find an error please send an email to mail@el-component.com