HSB1109 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -0.1 A
• Collector Dissipation: 1.25 W
• DC Current Gain (h_fe): 60 to 320
• Transition Frequency, min: 140 MHz
• Operating and Storage Junction Temperature Range: -50 to +150 °C
• Package: TO-126
• Electrically Similar to the Popular 2SB1109 transistor

Here is an image showing the pin diagram of this transistor.The HSB1109 transistor can have a current gain of 60 to 320. The gain of the HSB1109-B will be in the range from 60 to 120, for the HSB1109-C it will be in the range from 100 to 200, for the HSB1109-D it will be in the range from 160 to 320.The complementary NPN transistor to the HSB1109 is the HSD1609.You can replace the HSB1109 with the 2SA1220A, 2SA1352, 2SA1353, 2SA1380, 2SA1381, 2SA1406, 2SA1407, 2SA1478, 2SA1479, 2SA1480, 2SA1540, 2SA1541, 2SB1109, 2SB1110, KSA1220A or KSA1381.