2SB1109-B Bipolar Transistor

Characteristics of 2SB1109-B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126

Pinout of 2SB1109-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1109-B transistor can have a current gain of 60 to 120. The gain of the 2SB1109 will be in the range from 60 to 320, for the 2SB1109-C it will be in the range from 100 to 200, for the 2SB1109-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1109-B might only be marked "B1109-B".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1109-B is the 2SD1609-B.

2SB1109-B Transistor in TO-92 Package

The HSB1109S-B is the TO-92 version of the 2SB1109-B.

Replacement and Equivalent for 2SB1109-B transistor

You can replace the 2SB1109-B with the 2SA1220A, 2SA1220A-R, 2SA1352, 2SA1352-D, 2SA1353, 2SA1353-D, 2SA1380, 2SA1380-D, 2SA1381, 2SA1381-D, 2SA1406, 2SA1406-D, 2SA1407, 2SA1407-D, 2SA1478, 2SA1478-D, 2SA1479, 2SA1479-D, 2SA1480, 2SA1480-D, 2SA1540, 2SA1540-D, 2SA1541, 2SA1541-D, 2SB1110, 2SB1110-B, 2SB649A, 2SB649A-B, HSB1109, HSB1109-B, KSA1220A, KSA1220A-R, KSA1381, KSA1381-D, KSE350, MJE350 or MJE350G.
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