SMBTA56 Bipolar Transistor
Characteristics of SMBTA56 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -4 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.33 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
Pinout of SMBTA56
Marking
Complementary NPN transistor
Replacement and Equivalent for SMBTA56 transistor
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