BC856B Bipolar Transistor

Characteristics of BC856B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC856B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856B transistor can have a current gain of 200 to 450. The gain of the BC856 will be in the range from 110 to 800, for the BC856A it will be in the range from 110 to 220, for the BC856C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856B is the BC846B.

Replacement and Equivalent for BC856B transistor

You can replace the BC856B with the 2SA1163, 2SA1312, FMMTA56, KST56, MMBTA56, PMBTA56 or SMBTA56.
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