BC856 Bipolar Transistor

Characteristics of BC856 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC856

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856 transistor can have a current gain of 110 to 800. The gain of the BC856A will be in the range from 110 to 220, for the BC856B it will be in the range from 200 to 450, for the BC856C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856 is the BC846.

Replacement and Equivalent for BC856 transistor

You can replace the BC856 with the FMMTA56, KST56, MMBTA56, PMBTA56 or SMBTA56.
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