BCW61B Bipolar Transistor
Characteristics of BCW61B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -32 V
- Collector-Base Voltage, max: -32 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 180 to 310
- Noise Figure, max: 6 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of BCW61B
Complementary NPN transistor
Replacement and Equivalent for BCW61B transistor
If you find an error please send an email to mail@el-component.com