BCW67B Bipolar Transistor

Characteristics of BCW67B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 160 to 400
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW67B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW67B transistor can have a current gain of 160 to 400. The gain of the BCW67 will be in the range from 100 to 630, for the BCW67A it will be in the range from 100 to 250, for the BCW67C it will be in the range from 250 to 630.

Complementary NPN transistor

The complementary NPN transistor to the BCW67B is the BCW65B.

Replacement and Equivalent for BCW67B transistor

You can replace the BCW67B with the BCW68, BCW68G, MMBT4354 or MMBT4355.
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