BCW68G Bipolar Transistor

Characteristics of BCW68G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 160 to 400
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW68G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW68G transistor can have a current gain of 160 to 400. The gain of the BCW68 will be in the range from 100 to 630, for the BCW68F it will be in the range from 100 to 250, for the BCW68H it will be in the range from 250 to 630.

Complementary NPN transistor

The complementary NPN transistor to the BCW68G is the BCW66G.

Replacement and Equivalent for BCW68G transistor

You can replace the BCW68G with the MMBT4354 or MMBT4355.
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